Lu W - Search Results

1

Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems.

Song MK, Kang JH, Zhang X, Ji W, Ascoli A, Messaris I, Demirkol AS, Dong B, Aggarwal S, Wan W, Hong SM, Cardwell SG, Boybat I, Seo JS, Lee JS, Lanza M, Yeon H, Onen M, Li J, Yildiz B, Del Alamo JA, Kim S, Choi S, Milano G, Ricciardi C, Alff L, Chai Y, Wang Z, Bhaskaran H, Hersam MC, Strukov D, Wong HP, Valov I, Gao B, Wu H, Tetzlaff R, Sebastian A, Lu W, Chua L, Yang JJ, Kim J. Song MK, et al. Among authors: lu w. ACS Nano. 2023 Jul 11;17(13):11994-12039. doi: 10.1021/acsnano.3c03505. Epub 2023 Jun 29. ACS Nano. 2023. PMID: 37382380 Review.

2

Programmable resistance switching in nanoscale two-terminal devices.

Jo SH, Kim KH, Lu W. Jo SH, et al. Among authors: lu w. Nano Lett. 2009 Jan;9(1):496-500. doi: 10.1021/nl803669s. Nano Lett. 2009. PMID: 19113891

3

High-density crossbar arrays based on a Si memristive system.

Jo SH, Kim KH, Lu W. Jo SH, et al. Among authors: lu w. Nano Lett. 2009 Feb;9(2):870-4. doi: 10.1021/nl8037689. Nano Lett. 2009. PMID: 19206536

4

Stochastic memristive devices for computing and neuromorphic applications.

Gaba S, Sheridan P, Zhou J, Choi S, Lu W. Gaba S, et al. Among authors: lu w. Nanoscale. 2013 Jul 7;5(13):5872-8. doi: 10.1039/c3nr01176c. Epub 2013 May 22. Nanoscale. 2013. PMID: 23698627

5

Oxide heterostructure resistive memory.

Yang Y, Choi S, Lu W. Yang Y, et al. Among authors: lu w. Nano Lett. 2013 Jun 12;13(6):2908-15. doi: 10.1021/nl401287w. Epub 2013 Jun 4. Nano Lett. 2013. PMID: 23724783

6

Random telegraph noise and resistance switching analysis of oxide based resistive memory.

Choi S, Yang Y, Lu W. Choi S, et al. Among authors: lu w. Nanoscale. 2014 Jan 7;6(1):400-4. doi: 10.1039/c3nr05016e. Epub 2013 Nov 8. Nanoscale. 2014. PMID: 24202235

7

Comprehensive physical model of dynamic resistive switching in an oxide memristor.

Kim S, Choi S, Lu W. Kim S, et al. Among authors: lu w. ACS Nano. 2014 Mar 25;8(3):2369-76. doi: 10.1021/nn405827t. Epub 2014 Feb 28. ACS Nano. 2014. PMID: 24571386

8

Nanoimprint-Assisted Shear Exfoliation (NASE) for Producing Multilayer MoS2 Structures as Field-Effect Transistor Channel Arrays.

Chen M, Nam H, Rokni H, Wi S, Yoon JS, Chen P, Kurabayashi K, Lu W, Liang X. Chen M, et al. Among authors: lu w. ACS Nano. 2015 Sep 22;9(9):8773-85. doi: 10.1021/acsnano.5b01715. Epub 2015 Aug 27. ACS Nano. 2015. PMID: 26302003

9

Abnormal Multiple Charge Memory States in Exfoliated Few-Layer WSe₂ Transistors.

Chen M, Wang Y, Shepherd N, Huard C, Zhou J, Guo LJ, Lu W, Liang X. Chen M, et al. Among authors: lu w. ACS Nano. 2017 Jan 24;11(1):1091-1102. doi: 10.1021/acsnano.6b08156. Epub 2017 Jan 12. ACS Nano. 2017. PMID: 28071898

10

Hardware implementation of memristor-based artificial neural networks.

Aguirre F, Sebastian A, Le Gallo M, Song W, Wang T, Yang JJ, Lu W, Chang MF, Ielmini D, Yang Y, Mehonic A, Kenyon A, Villena MA, Roldán JB, Wu Y, Hsu HH, Raghavan N, Suñé J, Miranda E, Eltawil A, Setti G, Smagulova K, Salama KN, Krestinskaya O, Yan X, Ang KW, Jain S, Li S, Alharbi O, Pazos S, Lanza M. Aguirre F, et al. Among authors: lu w. Nat Commun. 2024 Mar 4;15(1):1974. doi: 10.1038/s41467-024-45670-9. Nat Commun. 2024. PMID: 38438350 Free PMC article. Review.

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