Study of Selective Dry Etching Effects of 15-Cycle Si0.7Ge0.3/Si Multilayer Structure in Gate-All-Around Transistor Process.
Liu E, Li J, Zhou N, Chen R, Shao H, Gao J, Zhang Q, Kong Z, Lin H, Zhang C, Lai P, Yang C, Liu Y, Wang G, Zhao C, Yang T, Yin H, Li J, Luo J, Wang W.
Liu E, et al. Among authors: chen r.
Nanomaterials (Basel). 2023 Jul 21;13(14):2127. doi: 10.3390/nano13142127.
Nanomaterials (Basel). 2023.
PMID: 37513138
Free PMC article.