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Effect of laser fluence on the optoelectronic properties of nanostructured GaN/porous silicon prepared by pulsed laser deposition.
Sci Rep. 2023 Nov 29;13(1):21007. doi: 10.1038/s41598-023-47955-3.
Sci Rep. 2023.
PMID: 38030706
Free PMC article.
Preparation of GaN/Porous silicon heterojunction photodetector by laser deposition technique.
Fakhri MA, Jabbar HD, AbdulRazzaq MJ, Salim ET, Azzahrani AS, Ibrahim RK, Ismail RA.
Fakhri MA, et al. Among authors: jabbar hd.
Sci Rep. 2023 Sep 7;13(1):14746. doi: 10.1038/s41598-023-41396-8.
Sci Rep. 2023.
PMID: 37679411
Free PMC article.
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Optimizing charge transport in hybrid GaN-PEDOT:PSS/PMMADevice for advanced application.
Fakhri MA, Salim ET, Ketab MR, Jabbar HD, Ibrahim OA, Azzahrani AS, AbdulRazzaq MJ, Ismail RA, Basem A, Alsultany FH, Gopinath SCB.
Fakhri MA, et al. Among authors: jabbar hd.
Sci Rep. 2024 Jun 4;14(1):12841. doi: 10.1038/s41598-024-63197-3.
Sci Rep. 2024.
PMID: 38834703
Free PMC article.
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