Perez E - Search Results

1

Blooming and pruning: learning from mistakes with memristive synapses.

Nikiruy K, Perez E, Baroni A, Reddy KDS, Pechmann S, Wenger C, Ziegler M. Nikiruy K, et al. Among authors: perez e. Sci Rep. 2024 Apr 2;14(1):7802. doi: 10.1038/s41598-024-57660-4. Sci Rep. 2024. PMID: 38565677 Free PMC article.

2

Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance.

Niu G, Calka P, Auf der Maur M, Santoni F, Guha S, Fraschke M, Hamoumou P, Gautier B, Perez E, Walczyk C, Wenger C, Di Carlo A, Alff L, Schroeder T. Niu G, et al. Among authors: perez e. Sci Rep. 2016 May 16;6:25757. doi: 10.1038/srep25757. Sci Rep. 2016. PMID: 27181525 Free PMC article.

3

Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition.

Niu G, Kim HD, Roelofs R, Perez E, Schubert MA, Zaumseil P, Costina I, Wenger C. Niu G, et al. Among authors: perez e. Sci Rep. 2016 Jun 17;6:28155. doi: 10.1038/srep28155. Sci Rep. 2016. PMID: 27312225 Free PMC article.

4

Electron holography on HfO₂/HfO_2-x bilayer structures with multilevel resistive switching properties.

Niu G, Schubert MA, Sharath SU, Zaumseil P, Vogel S, Wenger C, Hildebrandt E, Bhupathi S, Perez E, Alff L, Lehmann M, Schroeder T, Niermann T. Niu G, et al. Among authors: perez e. Nanotechnology. 2017 May 26;28(21):215702. doi: 10.1088/1361-6528/aa6cd9. Epub 2017 May 2. Nanotechnology. 2017. PMID: 28462907

5

Impact of the precursor chemistry and process conditions on the cell-to-cell variability in 1T-1R based HfO₂ RRAM devices.

Grossi A, Perez E, Zambelli C, Olivo P, Miranda E, Roelofs R, Woodruff J, Raisanen P, Li W, Givens M, Costina I, Schubert MA, Wenger C. Grossi A, et al. Among authors: perez e. Sci Rep. 2018 Jul 24;8(1):11160. doi: 10.1038/s41598-018-29548-7. Sci Rep. 2018. PMID: 30042433 Free PMC article.

6

Analogue pattern recognition with stochastic switching binary CMOS-integrated memristive devices.

Zahari F, Pérez E, Mahadevaiah MK, Kohlstedt H, Wenger C, Ziegler M. Zahari F, et al. Among authors: perez e. Sci Rep. 2020 Sep 2;10(1):14450. doi: 10.1038/s41598-020-71334-x. Sci Rep. 2020. PMID: 32879397 Free PMC article.

7

Neuromorphic on-chip recognition of saliva samples of COPD and healthy controls using memristive devices.

Zarrin PS, Zahari F, Mahadevaiah MK, Perez E, Kohlstedt H, Wenger C. Zarrin PS, et al. Among authors: perez e. Sci Rep. 2020 Nov 12;10(1):19742. doi: 10.1038/s41598-020-76823-7. Sci Rep. 2020. PMID: 33184439 Free PMC article.

8

An energy-efficient in-memory computing architecture for survival data analysis based on resistive switching memories.

Baroni A, Glukhov A, Pérez E, Wenger C, Calore E, Schifano SF, Olivo P, Ielmini D, Zambelli C. Baroni A, et al. Among authors: perez e. Front Neurosci. 2022 Aug 9;16:932270. doi: 10.3389/fnins.2022.932270. eCollection 2022. Front Neurosci. 2022. PMID: 36017177 Free PMC article.

9

TiN/Ti/HfO₂/TiN memristive devices for neuromorphic computing: from synaptic plasticity to stochastic resonance.

Maldonado D, Cantudo A, Perez E, Romero-Zaliz R, Perez-Bosch Quesada E, Mahadevaiah MK, Jimenez-Molinos F, Wenger C, Roldan JB. Maldonado D, et al. Among authors: perez bosch quesada e, perez e. Front Neurosci. 2023 Sep 19;17:1271956. doi: 10.3389/fnins.2023.1271956. eCollection 2023. Front Neurosci. 2023. PMID: 37795180 Free PMC article.

10

Kinetic Monte Carlo simulation analysis of the conductance drift in Multilevel HfO₂-based RRAM devices.

Maldonado D, Baroni A, Aldana S, Dorai Swamy Reddy K, Pechmann S, Wenger C, Roldán JB, Pérez E. Maldonado D, et al. Among authors: perez e. Nanoscale. 2024 Oct 17;16(40):19021-19033. doi: 10.1039/d4nr02975e. Nanoscale. 2024. PMID: 39300795

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