Ding S - Search Results

1

Monolithic three-dimensional tier-by-tier integration via van der Waals lamination.

Lu D, Chen Y, Lu Z, Ma L, Tao Q, Li Z, Kong L, Liu L, Yang X, Ding S, Liu X, Li Y, Wu R, Wang Y, Hu Y, Duan X, Liao L, Liu Y. Lu D, et al. Among authors: ding s. Nature. 2024 Jun;630(8016):340-345. doi: 10.1038/s41586-024-07406-z. Epub 2024 May 22. Nature. 2024. PMID: 38778106

2

Dry Exfoliation of Large-Area 2D Monolayer and Heterostructure Arrays.

Li Z, Ren L, Wang S, Huang X, Li Q, Lu Z, Ding S, Deng H, Chen P, Lin J, Hu Y, Liao L, Liu Y. Li Z, et al. Among authors: ding s. ACS Nano. 2021 Aug 24;15(8):13839-13846. doi: 10.1021/acsnano.1c05734. Epub 2021 Aug 6. ACS Nano. 2021. PMID: 34355880

3

Wafer-scale and universal van der Waals metal semiconductor contact.

Kong L, Wu R, Chen Y, Huangfu Y, Liu L, Li W, Lu D, Tao Q, Song W, Li W, Lu Z, Liu X, Li Y, Li Z, Tong W, Ding S, Liu S, Ma L, Ren L, Wang Y, Liao L, Duan X, Liu Y. Kong L, et al. Among authors: ding s. Nat Commun. 2023 Feb 23;14(1):1014. doi: 10.1038/s41467-023-36715-6. Nat Commun. 2023. PMID: 36823424 Free PMC article.

4

High-Density Vertical Transistors with Pitch Size Down to 20 nm.

Xiao Z, Liu L, Chen Y, Lu Z, Yang X, Gong Z, Li W, Kong L, Ding S, Li Z, Lu D, Ma L, Liu S, Liu X, Liu Y. Xiao Z, et al. Among authors: ding s. Adv Sci (Weinh). 2023 Oct;10(29):e2302760. doi: 10.1002/advs.202302760. Epub 2023 Aug 8. Adv Sci (Weinh). 2023. PMID: 37552811 Free PMC article.

5

Highly Stable HfO₂ Memristors through van der Waals Electrode Lamination and Delamination.

Tong W, Wei W, Zhang X, Ding S, Lu Z, Liu L, Li W, Pan C, Kong L, Wang Y, Zhu M, Liang SJ, Miao F, Liu Y. Tong W, et al. Among authors: ding s. Nano Lett. 2023 Nov 8;23(21):9928-9935. doi: 10.1021/acs.nanolett.3c02888. Epub 2023 Oct 20. Nano Lett. 2023. PMID: 37862098

6

Ag-Assisted Dry Exfoliation of Large-Scale and Continuous 2D Monolayers.

Ding S, Liu C, Li Z, Lu Z, Tao Q, Lu D, Chen Y, Tong W, Liu L, Li W, Ma L, Yang X, Xiao Z, Wang Y, Liao L, Liu Y. Ding S, et al. ACS Nano. 2024 Jan 9;18(1):1195-1203. doi: 10.1021/acsnano.3c11573. Epub 2023 Dec 28. ACS Nano. 2024. PMID: 38153837

7

High-density vertical sidewall MoS₂ transistors through T-shape vertical lamination.

Tao Q, Wu R, Zou X, Chen Y, Li W, Lu Z, Ma L, Kong L, Lu D, Yang X, Song W, Li W, Liu L, Ding S, Liu X, Duan X, Liao L, Liu Y. Tao Q, et al. Among authors: ding s. Nat Commun. 2024 Jul 10;15(1):5774. doi: 10.1038/s41467-024-50185-4. Nat Commun. 2024. PMID: 38982079 Free PMC article.

8

Large-scale sub-5-nm vertical transistors by van der Waals integration.

Yang X, He R, Lu Z, Chen Y, Liu L, Lu D, Ma L, Tao Q, Kong L, Xiao Z, Liu S, Li Z, Ding S, Liu X, Li Y, Wang Y, Liao L, Liu Y. Yang X, et al. Among authors: ding s. Nat Commun. 2024 Sep 3;15(1):7676. doi: 10.1038/s41467-024-52150-7. Nat Commun. 2024. PMID: 39227619 Free PMC article.

9

Polymer-Free and Dry Patterning of Wafer-Scale Two-Dimensional Semiconductors via van der Waals Delamination.

Ding S, Liu Y, Tao Q, Chen Y, Gao W, Niu W, Liu C, Li Y, Liu X, Gao J, Niu K, Kong L, Ma L, Lu D, Wang Y, Liao L, Feng Q, Liu Y. Ding S, et al. Nano Lett. 2025 Jan 16. doi: 10.1021/acs.nanolett.4c05884. Online ahead of print. Nano Lett. 2025. PMID: 39818866

10

An Unenclosed Quasi-Static Cavity Resonator-Based Ubiquitous 3-D Wireless Power Transfer System Supporting Simultaneous Through-Wall Wireless Communications.

Zhang Q, Fan L, Ren F, Yue Z, Zhao D, Ding S, Wang B. Zhang Q, et al. Among authors: ding s. Micromachines (Basel). 2024 Dec 26;16(1):13. doi: 10.3390/mi16010013. Micromachines (Basel). 2024. PMID: 39858669

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