Wallace RM - Search Results

1

Fundamental Understanding of Interface Chemistry and Electrical Contact Properties of Bi and MoS₂.

Kim SY, Sun Z, Roy J, Wang X, Chen Z, Appenzeller J, Wallace RM. Kim SY, et al. Among authors: wallace rm. ACS Appl Mater Interfaces. 2024 Oct 9;16(40):54790-54798. doi: 10.1021/acsami.4c10082. Epub 2024 Sep 24. ACS Appl Mater Interfaces. 2024. PMID: 39316070

2

Interface Chemistry and Band Alignment Study of Ni and Ag Contacts on MoS₂.

Wang X, Kim SY, Wallace RM. Wang X, et al. Among authors: wallace rm. ACS Appl Mater Interfaces. 2021 Apr 7;13(13):15802-15810. doi: 10.1021/acsami.0c22476. Epub 2021 Mar 25. ACS Appl Mater Interfaces. 2021. PMID: 33764063

3

Mechanism of Fermi Level Pinning for Metal Contacts on Molybdenum Dichalcogenide.

Wang X, Hu Y, Kim SY, Cho K, Wallace RM. Wang X, et al. Among authors: wallace rm. ACS Appl Mater Interfaces. 2024 Mar 13;16(10):13258-13266. doi: 10.1021/acsami.3c18332. Epub 2024 Feb 29. ACS Appl Mater Interfaces. 2024. PMID: 38422472

4

Low Contact Resistance on Monolayer MoS₂ Field-Effect Transistors Achieved by CMOS-Compatible Metal Contacts.

Sun Z, Kim SY, Cai J, Shen J, Lan HY, Tan Y, Wang X, Shen C, Wang H, Chen Z, Wallace RM, Appenzeller J. Sun Z, et al. Among authors: wallace rm. ACS Nano. 2024 Aug 20;18(33):22444-22453. doi: 10.1021/acsnano.4c07267. Epub 2024 Aug 7. ACS Nano. 2024. PMID: 39110477

5

Origins of Fermi Level Pinning for Ni and Ag Metal Contacts on Tungsten Dichalcogenides.

Wang X, Hu Y, Kim SY, Addou R, Cho K, Wallace RM. Wang X, et al. Among authors: wallace rm. ACS Nano. 2023 Oct 24;17(20):20353-20365. doi: 10.1021/acsnano.3c06494. Epub 2023 Oct 3. ACS Nano. 2023. PMID: 37788682

6

Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure.

Azcatl A, Qin X, Prakash A, Zhang C, Cheng L, Wang Q, Lu N, Kim MJ, Kim J, Cho K, Addou R, Hinkle CL, Appenzeller J, Wallace RM. Azcatl A, et al. Among authors: wallace rm. Nano Lett. 2016 Sep 14;16(9):5437-43. doi: 10.1021/acs.nanolett.6b01853. Epub 2016 Aug 9. Nano Lett. 2016. PMID: 27494551

7

Correction to "Mechanism of Fermi Level Pinning for Metal Contacts on Molybdenum Dichalcogenide".

Wang X, Hu Y, Kim SY, Cho K, Wallace RM. Wang X, et al. Among authors: wallace rm. ACS Appl Mater Interfaces. 2024 Aug 28;16(34):45798. doi: 10.1021/acsami.4c12434. Epub 2024 Aug 18. ACS Appl Mater Interfaces. 2024. PMID: 39155474 No abstract available.

8

MoS2-Titanium Contact Interface Reactions.

McDonnell S, Smyth C, Hinkle CL, Wallace RM. McDonnell S, et al. Among authors: wallace rm. ACS Appl Mater Interfaces. 2016 Mar;8(12):8289-94. doi: 10.1021/acsami.6b00275. Epub 2016 Mar 21. ACS Appl Mater Interfaces. 2016. PMID: 26967016

9

Large-Area Intercalated Two-Dimensional Pb/Graphene Heterostructure as a Platform for Generating Spin-Orbit Torque.

Vera A, Zheng B, Yanez W, Yang K, Kim SY, Wang X, Kotsakidis JC, El-Sherif H, Krishnan G, Koch RJ, Bowen TA, Dong C, Wang Y, Wetherington M, Rotenberg E, Bassim N, Friedman AL, Wallace RM, Liu C, Samarth N, Crespi VH, Robinson JA. Vera A, et al. Among authors: wallace rm. ACS Nano. 2024 Aug 20;18(33):21985-21997. doi: 10.1021/acsnano.4c04075. Epub 2024 Aug 5. ACS Nano. 2024. PMID: 39102316

10

Surface Defects on Natural MoS2.

Addou R, Colombo L, Wallace RM. Addou R, et al. Among authors: wallace rm. ACS Appl Mater Interfaces. 2015 Jun 10;7(22):11921-9. doi: 10.1021/acsami.5b01778. Epub 2015 May 27. ACS Appl Mater Interfaces. 2015. PMID: 25980312

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