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Ferroelectricity in Ultrathin HfO2-Based Films by Nanosecond Laser Annealing.
ACS Appl Mater Interfaces. 2024 Oct 3;16(41):55684-92. doi: 10.1021/acsami.4c10002. Online ahead of print.
ACS Appl Mater Interfaces. 2024.
PMID: 39359120
Free PMC article.
Ferroelectric-Antiferroelectric Transition of Hf1-x Zr x O2 on Indium Arsenide with Enhanced Ferroelectric Characteristics for Hf0.2Zr0.8O2.
Dahlberg H, Persson AEO, Athle R, Wernersson LE.
Dahlberg H, et al. Among authors: athle r.
ACS Appl Electron Mater. 2022 Dec 27;4(12):6357-6363. doi: 10.1021/acsaelm.2c01483. Epub 2022 Dec 14.
ACS Appl Electron Mater. 2022.
PMID: 36588621
Free PMC article.
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Effects of TiN Top Electrode Texturing on Ferroelectricity in Hf1-xZrxO2.
Athle R, Persson AEO, Irish A, Menon H, Timm R, Borg M.
Athle R, et al.
ACS Appl Mater Interfaces. 2021 Mar 10;13(9):11089-11095. doi: 10.1021/acsami.1c01734. Epub 2021 Feb 24.
ACS Appl Mater Interfaces. 2021.
PMID: 33625827
Free PMC article.
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Improved quality of InSb-on-insulator microstructures by flash annealing into melt.
Menon H, Södergren L, Athle R, Johansson J, Steer M, Thayne I, Borg M.
Menon H, et al. Among authors: athle r.
Nanotechnology. 2021 Apr 16;32(16):165602. doi: 10.1088/1361-6528/abd656.
Nanotechnology. 2021.
PMID: 33361572
Free article.
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