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All-Epitaxial Self-Assembly of Silicon Color Centers Confined Within Sub-Nanometer Thin Layers Using Ultra-Low Temperature Epitaxy.
Aberl J, Navarrete EP, Karaman M, Enriquez DH, Wilflingseder C, Salomon A, Primetzhofer D, Schubert MA, Capellini G, Fromherz T, Deák P, Udvarhelyi P, Li S, Gali Á, Brehm M. Aberl J, et al. Among authors: udvarhelyi p. Adv Mater. 2024 Nov;36(48):e2408424. doi: 10.1002/adma.202408424. Epub 2024 Oct 12. Adv Mater. 2024. PMID: 39394979 Free PMC article.
Carbon defect qubit in two-dimensional WS2.
Li S, Thiering G, Udvarhelyi P, Ivády V, Gali A. Li S, et al. Among authors: udvarhelyi p. Nat Commun. 2022 Mar 8;13(1):1210. doi: 10.1038/s41467-022-28876-7. Nat Commun. 2022. PMID: 35260586 Free PMC article.
Precise Characterization of a Waveguide Fiber Interface in Silicon Carbide.
Krumrein M, Nold R, Davidson-Marquis F, Bouamra A, Niechziol L, Steidl T, Peng R, Körber J, Stöhr R, Gross N, Smet JH, Ul-Hassan J, Udvarhelyi P, Gali A, Kaiser F, Wrachtrup J. Krumrein M, et al. Among authors: udvarhelyi p. ACS Photonics. 2024 May 22;11(6):2160-2170. doi: 10.1021/acsphotonics.4c00538. eCollection 2024 Jun 19. ACS Photonics. 2024. PMID: 38911842
Controlled Surface Modification to Revive Shallow NV- Centers.
Neethirajan JN, Hache T, Paone D, Pinto D, Denisenko A, Stöhr R, Udvarhelyi P, Pershin A, Gali A, Wrachtrup J, Kern K, Singha A. Neethirajan JN, et al. Among authors: udvarhelyi p. Nano Lett. 2023 Apr 12;23(7):2563-2569. doi: 10.1021/acs.nanolett.2c04733. Epub 2023 Mar 16. Nano Lett. 2023. PMID: 36927005 Free PMC article.
High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide.
Nagy R, Niethammer M, Widmann M, Chen YC, Udvarhelyi P, Bonato C, Hassan JU, Karhu R, Ivanov IG, Son NT, Maze JR, Ohshima T, Soykal ÖO, Gali Á, Lee SY, Kaiser F, Wrachtrup J. Nagy R, et al. Among authors: udvarhelyi p. Nat Commun. 2019 Apr 26;10(1):1954. doi: 10.1038/s41467-019-09873-9. Nat Commun. 2019. PMID: 31028260 Free PMC article.
Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide.
Morioka N, Babin C, Nagy R, Gediz I, Hesselmeier E, Liu D, Joliffe M, Niethammer M, Dasari D, Vorobyov V, Kolesov R, Stöhr R, Ul-Hassan J, Son NT, Ohshima T, Udvarhelyi P, Thiering G, Gali A, Wrachtrup J, Kaiser F. Morioka N, et al. Among authors: udvarhelyi p. Nat Commun. 2020 May 20;11(1):2516. doi: 10.1038/s41467-020-16330-5. Nat Commun. 2020. PMID: 32433556 Free PMC article.
Electrically driven optical interferometry with spins in silicon carbide.
Miao KC, Bourassa A, Anderson CP, Whiteley SJ, Crook AL, Bayliss SL, Wolfowicz G, Thiering G, Udvarhelyi P, Ivády V, Abe H, Ohshima T, Gali Á, Awschalom DD. Miao KC, et al. Among authors: udvarhelyi p. Sci Adv. 2019 Nov 22;5(11):eaay0527. doi: 10.1126/sciadv.aay0527. eCollection 2019 Nov. Sci Adv. 2019. PMID: 31803839 Free PMC article.
25 results