Taniguchi T - Search Results

1

Improved Three-Dimensional Reconstructions in Electron Ptychography through Defocus Series Measurements.

Schloz M, Pekin TC, Brown HG, Byrne DO, Esser BD, Terzoudis-Lumsden E, Taniguchi T, Watanabe K, Findlay SD, Haas B, Ciston J, Koch CT. Schloz M, et al. Among authors: taniguchi t. Microsc Microanal. 2024 Nov 18:ozae110. doi: 10.1093/mam/ozae110. Online ahead of print. Microsc Microanal. 2024. PMID: 39558540

2

Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal.

Watanabe K, Taniguchi T, Kanda H. Watanabe K, et al. Among authors: taniguchi t. Nat Mater. 2004 Jun;3(6):404-9. doi: 10.1038/nmat1134. Epub 2004 May 23. Nat Mater. 2004. PMID: 15156198

3

Deep ultraviolet light-emitting hexagonal boron nitride synthesized at atmospheric pressure.

Kubota Y, Watanabe K, Tsuda O, Taniguchi T. Kubota Y, et al. Among authors: taniguchi t. Science. 2007 Aug 17;317(5840):932-4. doi: 10.1126/science.1144216. Science. 2007. PMID: 17702939

4

Functional complex point-defect structure in a huge-size-mismatch system.

Ishikawa R, Shibata N, Oba F, Taniguchi T, Findlay SD, Tanaka I, Ikuhara Y. Ishikawa R, et al. Among authors: taniguchi t. Phys Rev Lett. 2013 Feb 8;110(6):065504. doi: 10.1103/PhysRevLett.110.065504. Epub 2013 Feb 7. Phys Rev Lett. 2013. PMID: 23432272

5

Strong oxidation resistance of atomically thin boron nitride nanosheets.

Li LH, Cervenka J, Watanabe K, Taniguchi T, Chen Y. Li LH, et al. Among authors: taniguchi t. ACS Nano. 2014 Feb 25;8(2):1457-62. doi: 10.1021/nn500059s. Epub 2014 Jan 10. ACS Nano. 2014. PMID: 24400990

6

Atomic structure of luminescent centers in high-efficiency Ce-doped w-AlN single crystal.

Ishikawa R, Lupini AR, Oba F, Findlay SD, Shibata N, Taniguchi T, Watanabe K, Hayashi H, Sakai T, Tanaka I, Ikuhara Y, Pennycook SJ. Ishikawa R, et al. Among authors: taniguchi t. Sci Rep. 2014 Jan 21;4:3778. doi: 10.1038/srep03778. Sci Rep. 2014. PMID: 24445335 Free PMC article.

7

Three-dimensional location of a single dopant with atomic precision by aberration-corrected scanning transmission electron microscopy.

Ishikawa R, Lupini AR, Findlay SD, Taniguchi T, Pennycook SJ. Ishikawa R, et al. Among authors: taniguchi t. Nano Lett. 2014;14(4):1903-8. doi: 10.1021/nl500564b. Epub 2014 Mar 24. Nano Lett. 2014. PMID: 24646109

8

Competing channels for hot-electron cooling in graphene.

Ma Q, Gabor NM, Andersen TI, Nair NL, Watanabe K, Taniguchi T, Jarillo-Herrero P. Ma Q, et al. Among authors: taniguchi t. Phys Rev Lett. 2014 Jun 20;112(24):247401. doi: 10.1103/PhysRevLett.112.247401. Epub 2014 Jun 19. Phys Rev Lett. 2014. PMID: 24996107 Free article.

9

Direct observation of dopant atom diffusion in a bulk semiconductor crystal enhanced by a large size mismatch.

Ishikawa R, Mishra R, Lupini AR, Findlay SD, Taniguchi T, Pantelides ST, Pennycook SJ. Ishikawa R, et al. Among authors: taniguchi t. Phys Rev Lett. 2014 Oct 10;113(15):155501. doi: 10.1103/PhysRevLett.113.155501. Epub 2014 Oct 6. Phys Rev Lett. 2014. PMID: 25375721

10

Layer-by-layer dielectric breakdown of hexagonal boron nitride.

Hattori Y, Taniguchi T, Watanabe K, Nagashio K. Hattori Y, et al. Among authors: taniguchi t. ACS Nano. 2015 Jan 27;9(1):916-21. doi: 10.1021/nn506645q. Epub 2014 Dec 31. ACS Nano. 2015. PMID: 25549251

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