Hofmann M - Search Results

1

The Importance of Catalytic Effects in Hot-Electron-Driven Chemical Reactions.

Khurshid F, Muthu J, Wang YY, Wang YW, Shih MC, Chen DR, Lu YJ, Austin D, Glavin N, Plšek J, Kalbáč M, Hsieh YP, Hofmann M. Khurshid F, et al. Among authors: hofmann m. ACS Nano. 2024 Dec 17;18(50):34332-34340. doi: 10.1021/acsnano.4c12923. Epub 2024 Dec 4. ACS Nano. 2024. PMID: 39632340 Free PMC article.

2

Enhancing the Electrochemical Activity of 2D Materials Edges through Oriented Electric Fields.

Wang H, Chen DR, Lin YC, Lin PH, Chang JT, Muthu J, Hofmann M, Hsieh YP. Wang H, et al. Among authors: hofmann m. ACS Nano. 2024 Jul 16;18(30):19828-35. doi: 10.1021/acsnano.4c06341. Online ahead of print. ACS Nano. 2024. PMID: 39012271 Free PMC article.

3

Enhancing the Photoelectrochemical Hydrogen Evolution Reaction through Nanoscrolling of Two-Dimensional Material Heterojunctions.

Ghosh R, Singh M, Chang LW, Lin HI, Chen YS, Muthu J, Papnai B, Kang YS, Liao YM, Bera KP, Guo GY, Hsieh YP, Hofmann M, Chen YF. Ghosh R, et al. Among authors: hofmann m. ACS Nano. 2022 Apr 26;16(4):5743-5751. doi: 10.1021/acsnano.1c10772. Epub 2022 Apr 4. ACS Nano. 2022. PMID: 35377604

4

Confined VLS Growth of Single-Layer 2D Tungsten Nitrides.

Chin HT, Wang DC, Wang H, Muthu J, Khurshid F, Chen DR, Hofmann M, Chuang FC, Hsieh YP. Chin HT, et al. Among authors: hofmann m. ACS Appl Mater Interfaces. 2024 Jan 10;16(1):1705-1711. doi: 10.1021/acsami.3c13286. Epub 2023 Dec 25. ACS Appl Mater Interfaces. 2024. PMID: 38145463

5

Tungsten Nitride (W₅N₆): An Ultraresilient 2D Semimetal.

Chin HT, Wang DC, Gulo DP, Yao YC, Yeh HC, Muthu J, Chen DR, Kao TC, Kalbáč M, Lin PH, Cheng CM, Hofmann M, Liang CT, Liu HL, Chuang FC, Hsieh YP. Chin HT, et al. Among authors: hofmann m. Nano Lett. 2024 Jan 10;24(1):67-73. doi: 10.1021/acs.nanolett.3c03243. Epub 2023 Dec 27. Nano Lett. 2024. PMID: 38149785

6

Selective activation of MoS₂ grain boundaries for enhanced electrochemical activity.

Raman R, Muthu J, Yen ZL, Qorbani M, Chen YX, Chen DR, Hofmann M, Hsieh YP. Raman R, et al. Among authors: hofmann m. Nanoscale Horiz. 2024 May 29;9(6):946-955. doi: 10.1039/d4nh00005f. Nanoscale Horiz. 2024. PMID: 38456521

7

Defects in individual semiconducting single wall carbon nanotubes: Raman spectroscopic and in situ Raman spectroelectrochemical study.

Kalbac M, Hsieh YP, Farhat H, Kavan L, Hofmann M, Kong J, Dresselhaus MS. Kalbac M, et al. Among authors: hofmann m. Nano Lett. 2010 Nov 10;10(11):4619-26. doi: 10.1021/nl102727f. Epub 2010 Oct 12. Nano Lett. 2010. PMID: 20939607

8

Lateral Two-Dimensional Material Heterojunction Photodetectors with Ultrahigh Speed and Detectivity.

Chen DR, Hofmann M, Yao HM, Chiu SK, Chen SH, Luo YR, Hsu CC, Hsieh YP. Chen DR, et al. Among authors: hofmann m. ACS Appl Mater Interfaces. 2019 Feb 13;11(6):6384-6388. doi: 10.1021/acsami.8b19093. Epub 2019 Jan 31. ACS Appl Mater Interfaces. 2019. PMID: 30652856

9

Two-Dimensional Mechano-thermoelectric Heterojunctions for Self-Powered Strain Sensors.

Wang YY, Chen DR, Wu JK, Wang TH, Chuang C, Huang SY, Hsieh WP, Hofmann M, Chang YH, Hsieh YP. Wang YY, et al. Among authors: hofmann m. Nano Lett. 2021 Aug 25;21(16):6990-6997. doi: 10.1021/acs.nanolett.1c02331. Epub 2021 Aug 13. Nano Lett. 2021. PMID: 34387505

10

Impact of growth rate on graphene lattice-defect formation within a single crystalline domain.

Chin HT, Lee JJ, Hofmann M, Hsieh YP. Chin HT, et al. Among authors: hofmann m. Sci Rep. 2018 Mar 6;8(1):4046. doi: 10.1038/s41598-018-22512-5. Sci Rep. 2018. PMID: 29511308 Free PMC article.

Save citations to file

Email citations

Send citations to clipboard

Add to Collections

Add to My Bibliography

Create a file for external citation management software

Your saved search

Your RSS Feed

My Custom Filters

Publication date

Text availability

Article attribute

Article type

Article Language

Species

Sex

Age

Other

1,663 results

Search Page

Filters