Bringans RD - Search Results

1

Interface structure of ZnS/Si(001) and comparison with ZnSe/Si(001) and GaAs/Si(001).

Romano LT, Bringans RD, Zhou X, Kirk WP. Romano LT, et al. Among authors: bringans rd. Phys Rev B Condens Matter. 1995 Oct 15;52(15):11201-11205. doi: 10.1103/physrevb.52.11201. Phys Rev B Condens Matter. 1995. PMID: 9980221 No abstract available.

2

Atomic rearrangement at the interface of annealed ZnSe films grown on vicinal Si(001) substrates.

Romano LT, Bringans RD, Knall J, Biegelsen DK, Garcia A, Northrup JE, O'Keefe MA. Romano LT, et al. Among authors: bringans rd. Phys Rev B Condens Matter. 1994 Aug 15;50(7):4416-4423. doi: 10.1103/physrevb.50.4416. Phys Rev B Condens Matter. 1994. PMID: 9976741 No abstract available.

3

Effect of interface chemistry on the growth of ZnSe on the Si(100) surface.

Bringans RD, Biegelsen DK, Swartz L, Ponce FA, Tramontana JC. Bringans RD, et al. Phys Rev B Condens Matter. 1992 Jun 15;45(23):13400-13406. doi: 10.1103/physrevb.45.13400. Phys Rev B Condens Matter. 1992. PMID: 10001425 No abstract available.

4

Bonding of Se and ZnSe to the Si(100) surface.

Bringans RD, Olmstead MA. Bringans RD, et al. Phys Rev B Condens Matter. 1989 Jun 15;39(17):12985-12988. doi: 10.1103/physrevb.39.12985. Phys Rev B Condens Matter. 1989. PMID: 9948190 No abstract available.

5

Interface formation of GaAs with Si(100), Si(111), and Ge(111): Core-level spectroscopy for monolayer coverages of GaAs, Ga, and As.

Bringans RD, Olmstead MA, Uhrberg RI, Bachrach RZ. Bringans RD, et al. Phys Rev B Condens Matter. 1987 Dec 15;36(18):9569-9580. doi: 10.1103/physrevb.36.9569. Phys Rev B Condens Matter. 1987. PMID: 9942852 No abstract available.

6

Atomic structure of the metastable c(4 x 4) reconstruction of Si(100).

Uhrberg RI, Northrup JE, Biegelsen DK, Bringans RD, Swartz L. Uhrberg RI, et al. Among authors: bringans rd. Phys Rev B Condens Matter. 1992 Oct 15;46(16):10251-10256. doi: 10.1103/physrevb.46.10251. Phys Rev B Condens Matter. 1992. PMID: 10002868 No abstract available.

7

Photoemission study of bonding at the CaF2-on-Si(111) interface.

Olmstead MA, Uhrberg RI, Bringans RD, Bachrach RZ. Olmstead MA, et al. Among authors: bringans rd. Phys Rev B Condens Matter. 1987 May 15;35(14):7526-7532. doi: 10.1103/physrevb.35.7526. Phys Rev B Condens Matter. 1987. PMID: 9941058 No abstract available.

8

Atomic-step rearrangement on Si(100) by interaction with arsenic and the implication for GaAs-on-Si epitaxy.

Bringans RD, Biegelsen DK, Swartz L. Bringans RD, et al. Phys Rev B Condens Matter. 1991 Aug 15;44(7):3054-3063. doi: 10.1103/physrevb.44.3054. Phys Rev B Condens Matter. 1991. PMID: 9999897 No abstract available.

9

Arsenic termination of the Si(110) surface.

Biegelsen DK, Bringans RD, Northrup JE, Schabel MC, Swartz L. Biegelsen DK, et al. Among authors: bringans rd. Phys Rev B Condens Matter. 1993 Apr 15;47(15):9589-9596. doi: 10.1103/physrevb.47.9589. Phys Rev B Condens Matter. 1993. PMID: 10005025 No abstract available.

10

Electronic structure, atomic structure, and the passivated nature of the arsenic-terminated Si(111) surface.

Uhrberg RI, Bringans RD, Olmstead MA, Bachrach RZ, Northrup JE. Uhrberg RI, et al. Among authors: bringans rd. Phys Rev B Condens Matter. 1987 Mar 15;35(8):3945-3951. doi: 10.1103/physrevb.35.3945. Phys Rev B Condens Matter. 1987. PMID: 9941918 No abstract available.

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