Donor levels and the microscopic structure of the DX center in n-type Si-doped AlxGa0.51-xIn0.49P grown by molecular-beam epitaxy.
Mäkinen J, Laine T, Partanen J, Saarinen K, Hautojärvi P, Tappura K, Hakkarainen T, Asonen H, Pessa M, Kauppinen JP, Vänttinen K, Paalanen MA, Likonen J.
Mäkinen J, et al. Among authors: paalanen ma.
Phys Rev B Condens Matter. 1996 Mar 15;53(12):7851-7862. doi: 10.1103/physrevb.53.7851.
Phys Rev B Condens Matter. 1996.
PMID: 9982235
No abstract available.